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Up to 6 GHz Low Noise Silicon DataSheet PDF

Manufacture	Part Number	Description
Siemens Semiconductor Group	CFY30	GaAs FET (Low noise Fmin = 1.4 dB @ 4 GHz High gain 11.5 dB typ. @ 4 GHz)
Siemens Semiconductor Group	BAT14-03	Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance)
Siemens Semiconductor Group	BAR63-03	Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)
Siemens Semiconductor Group	BFR93P	NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA.)
Siemens Semiconductor Group	BFQ28	LOW NOISE NPN SILICON MICROWAVE TRANSISTOR UP TO 4GHz
Avago	AT-41486	Up to 6 GHz Low Noise Silicon Bipolar Transistor
Agilent(Hewlett-Packard)	AT-41470	Up to 6 GHz Low Noise Silicon Bipolar Transistor
Siemens Semiconductor Group	BFY193	HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low noise/ high gain broadband amplifiers up to 2 GHz.)
HP	AT-41410	Up to 6 GHz Low Noise Silicon Bipolar Transistor
Siemens Semiconductor Group	BAT15-04	Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)

Total 86 results

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